Non-volatile memory device and method for fabricating the same

ABSTRACT

A non-volatile memory device includes a peripheral circuit region and a cell region. A method for fabricating the non-volatile memory device includes forming gate patterns over a substrate, the gate pattern including a tunnel insulation layer, a floating gate electrode, a charge blocking layer and a control gate electrode, and removing the control gate electrode and the charge blocking layer of the gate pattern formed in the peripheral circuit region.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority of Korean Patent Application No.10-2009-0038541, filed on Apr. 30, 2009, the disclosure of which isincorporated herein by reference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor memory device and amethod for fabricating the same, and more particularly, to anon-volatile memory device and a method for fabricating the same.

A non-volatile memory device is capable of retaining stored data evenwhen power to the memory device is turned off. In particular, since thenon-volatile memory device stores data by supplying charges into afloating gate electrode, it is referred to as a floating gatenon-volatile memory device.

Herein, the non-volatile memory device includes a cell region and aperipheral circuit region. While a gate pattern of the cell regionstores data by supplying or releasing charges into or from the floatinggate electrode, a gate pattern of the peripheral circuit region operatesas a typical transistor. Therefore, when forming the gate patterns,there is required a process of forming a contact hole in a chargeblocking layer of the peripheral circuit region to connect the floatinggate electrode and a control gate electrode.

Hereinafter, a method for fabricating a non-volatile memory deviceaccording to the prior art and its problems will be described withreference to figures.

FIG. 1 illustrates a layout of the non-volatile memory device accordingto the prior art.

Referring to FIG. 1, an active region A is defined by a device isolationlayer formed as a line type that is disposed in a field region F. On asubstrate, a bit line BL is disposed in a first direction A-A′ and aplurality of source selection lines SSL and a plurality of drainselection lines DSL are disposed in a second direction B-B′ intersectingwith the first direction A-A′. Furthermore, a plurality of word lines WLis disposed between the source selection lines SSL and the drainselection lines DSL.

Herein, the source selection lines SSL connect gate electrodes of sourceselection transistors and a common source line CSL is disposed in ajunction region between the source selection lines SSL. The drainselection lines DSL connect gate electrodes of drain selectiontransistors and drain contact plugs DCT are disposed in a junctionregion between the drain selection lines DSL.

The source selection lines SSL or the drain selection lines DSL areformed in the peripheral circuit region to operate as typicaltransistors, and memory cells storing data are formed in the cellregion.

FIGS. 2A to 2E illustrate sectional views explaining a method forfabricating the non-volatile memory device according to the prior artand cross-sectional views taken along the first direction A-A′ of FIG.1.

Referring to FIG. 2A, after forming a tunnel insulation layer 21 and aconducting layer for a floating gate electrode on a substrate 20, aplurality of floating gate electrode patterns 22 extending parallel tothe first direction A-A′ is formed performing a patterning process and aprocess of forming a device isolation layer.

Then, a charge blocking layer 23 and a protection layer 24 are formed onthe floating gate electrode pattern 22. Herein, the protection layer 24is formed to prevent the charge blocking layer 23 from being damaged ina subsequent process of forming a contact hole in the charge blockinglayer 23.

Subsequently, a charge blocking layer contact mask 25 is formed on theprotection layer 24. At this point, the charge blocking layer contactmask 25 is formed to expose a peripheral circuit region, e.g., a portionof a region where selection lines are to be formed. This is to connectfloating gate electrodes and control gate electrodes that are to beformed in the peripheral circuit region in subsequent processes and thusmake the selection lines of the peripheral circuit region operate asnormal transistors.

Referring to FIG. 2B, a charge blocking layer contact hole is formed byetching the protection layer 24 and the charge blocking layer 23 usingthe charge blocking layer contact mask 25 as an etch barrier. In thisfigure, a protection layer including the charge blocking layer contacthole is indicated by a reference numeral 24A and a charge block layerincluding the charge blocking layer contact hole is indicated by areference numeral 23A.

After forming a conducting layer 26 and a hard mask layer 27 on aresultant structure including the charge blocking layer contact hole, amask pattern 28 is formed on the hard mask layer 27.

Referring to FIG. 2C, the hard mask layer 27, the conducting layer 26,the protection layer 24A, the charge blocking layer 23A and the floatinggate electrode pattern 22A are sequentially etched using the maskpattern 28 as an etch barrier.

As a result, a gate pattern including the tunnel insulation layer 21, anetched floating gate electrode pattern 22A, an etched charge blockinglayer 23B, an etched protection layer 24B and an etched conducting layer26A is formed, wherein the etched floating gate electrode pattern 22A isreferred to as a floating gate electrode and the etched conducting layer26A is referred to as a control gate electrode hereinafter. Herein, inthe gate pattern formed in the peripheral circuit region, the floatinggate electrode 22A and the control gate electrode 26A are connected toeach other by the contact hole.

Referring to FIG. 2D, after an oxide spacer 29 is formed on a sidewallof the gate pattern, a nitride spacer 30 is formed on the whole surfaceof a resultant structure including the oxide spacer 29.

After forming a first inter-layer insulation layer 31 on the wholesurface of a resultant structure including the nitride spacer 30, aplanarization process is performed on the first inter-layer insulationlayer 31 until a top surface of the nitride spacer 30 is exposed.

Referring to FIG. 2E, the first inter-layer insulation layer 31, thenitride spacer 30 and the oxide spacer 29 are etched back to a givendepth from a top surface of the gate pattern to expose a portion of thecontrol gate electrode 26A.

Then, a metal silicide control gate electrode 26B is formed byperforming a metal silicidation process on the partially exposed controlgate electrode 26A.

Subsequently, a second inter-layer insulation layer 32, a nitride spacer33 and a third inter-layer insulation layer 34 are sequentially formedon the whole surface of a resultant structure including the metalsilicide control gate electrode 26B.

The third inter-layer insulation layer 34, the nitride spacer 33, thesecond inter-layer insulation layer 32, the first inter-layer insulationlayer 31, the nitride spacer 30 and the tunnel insulation layer 21 areselectively etched to form a contact hole that exposes a portion of thesubstrate 20 disposed between the gate patterns formed in the peripheralcircuit region. Then, a contact plug is formed by filling the contacthole with a conducting layer 35.

According to the prior art as described above, the floating gateelectrode 22A and the control gate electrode 26B of the gate patternformed in the peripheral circuit region are connected to each otherthrough the process of forming the charge blocking layer contact hole.That is, while a memory cell is formed by separating the floating gateelectrode 22A from the control gate electrode 26B in a cell region, aselection line may be formed by connecting the floating gate electrode22A and the control gate electrode 26B in the peripheral circuit region.

However, according to the prior art, since there is required the processof forming the charge blocking layer contact hole, the fabricatingprocess is complicated and thus there is limitations in improving adegree of integration of a memory device. Problems of the prior art willbe described in detail hereinafter.

First of all, since an area is reduced by the improvement of the degreeof integration of the memory device, it is difficult to allocate thecharge blocking layer contact mask 25 in a desired position and performan etching process. That is, it is not easy to form the contact hole andthus the probability, that the transistors formed in the peripheralcircuit region abnormally operate, increases.

Second, there occurs the signal delay. Since the contact hole is formedby etching a portion of the charge blocking layer 23 when forming thegate pattern in the peripheral circuit region, the floating gateelectrode 22A cannot be connected to the control gate electrode 26B asone body through all of them and they are connected to each otherthrough a contact formed in their portions. Therefore, the signal delayoccurs by the contact resistance and the performance of the memorydevice is deteriorated since the signal delay further increases in aregion far from the contact.

Third, an electrical characteristic of the memory device changes sincean interface between the protection layer 24B and the control gateelectrode 26B becomes unstable. Herein, the protection layer 24B isformed on the charge blocking layer 23B to prevent the damage of thecharge blocking layer 23B when forming the contact hole, and theprotection layer 24B is typically formed of polysilicon. Like this,since the control gate electrode 26B is formed on the resultantstructure including the contact hole that is formed by etching theprotection layer 24B and the charge blocking layer 23B, the interfacebetween the protection layer 24B and the control gate electrode 26Bbecomes unstable and thus the performance of the memory device isdeteriorated.

Meanwhile, according the prior art, the gate pattern including thetunnel insulation layer 21, the floating gate electrode 22A, the chargeblocking layer 23B, the protection layer 24B and the control gateelectrode 26B is formed in any of the cell region and the peripheralcircuit region.

Therefore, since the height of the gate pattern is great, there may begenerated an empty region, i.e., a void, that is not filled up in theprocess of filling a gap region between gate patterns with the firstinter-layer insulation layer 31. For instance, a void may be generatedin the gap region between the gate patterns when filling the gap regionwith the first inter-layer insulation layer 31, referring to a referencenumeral {circle around (1)} in FIG. 2D, or a void may be generated inthe process of filling the contact hole with the conducting layer 35 toform the contact plug, referring to a reference numeral {circle around(2)} in FIG. 2E.

The above phenomenon is usually caused in a gap region between gatepatterns in a decoder region or a gap region between drain selectionlines. This induces a defective like a short circuit between adjacentdrain contacts in a subsequent process of forming the drain contacts.

FIG. 2F illustrates a plane view of a region where a drain contact isformed according to the prior art.

Referring to a process of forming the drain contact, after forming acontact hole exposing a portion of a substrate between drain selectionlines by etching layers such as an inter-layer insulation layer, a draincontact plug is formed by filling the contact hole with a conductinglayer.

At this point, referring to the reference numeral {circle around (2)} inFIG. 2E and a reference numeral {circle around (3)} in FIG. 2F, adjacentdrains may be connected to each other by a void generated in the processof filling the contact hole with the conducting layer and thus thedefective like the short circuit may be caused.

SUMMARY OF THE INVENTION

An embodiment of the present invention is directed to providing anon-volatile memory device and a method for fabricating the same,capable of omitting a contact process of connecting a floating gateelectrode and a control gate electrode.

Another embodiment of the present invention is directed to providing anon-volatile memory device and a method for fabricating the same, whichare appropriate in preventing the generation of a void when filling acontact hole with an inter-layer insulation layer by lowering the heightof a gate pattern.

In accordance with an aspect of the present invention, there is provideda method for fabricating a non-volatile memory device including aperipheral circuit region and a cell region, the method including:forming gate patterns over a substrate, the gate pattern including atunnel insulation layer, a floating gate electrode, a charge blockinglayer and a control gate electrode; and removing the control gateelectrode and the charge blocking layer of the gate pattern formed inthe peripheral circuit region.

In accordance with another aspect of the present invention, there isprovided a method for fabricating a non-volatile memory device includinga peripheral circuit region and a cell region, the method including:forming a tunnel insulation layer and a first conducting layer for afirst floating gate electrode over a substrate; forming a trench byetching the first conducting layer, the tunnel insulation layer and thesubstrate to a given depth; forming an isolation layer by filling thetrench with an insulation layer; forming a second conducting layer for asecond floating gate electrode over a resultant structure where theisolation layer is formed in the peripheral circuit region; forming acharge blocking layer and a third conducting layer for a control gateelectrode over a resultant structure where the second conducting layeris formed; forming gate patterns by etching the third conducting layer,the charge blocking layer, the second conducting layer and the firstconducting layer; and removing a control gate electrode and the chargeblocking layer formed in the peripheral circuit region.

In accordance with another aspect of the present invention, there isprovided a non-volatile memory device including: a peripheral circuitregion including a gate pattern that has a tunnel insulation layer and afloating gate electrode disposed over a substrate; and a cell regionincluding a gate pattern that has the tunnel insulation layer, thefloating gate electrode, a charge blocking layer and a control gateelectrode disposed over the substrate.

In accordance with another aspect of the present invention, there isprovided a non-volatile memory device including: a peripheral circuitregion including a gate pattern that has a tunnel insulation layer, afirst floating gate electrode and a second floating gate electrodedisposed over a substrate; and a cell region including a gate patternthat has the tunnel insulation layer, the first floating gate electrode,a charge blocking layer and a control gate electrode disposed over thesubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a schematic diagram showing a layout of anon-volatile memory device according to the prior art.

FIGS. 2A to 2E illustrate sectional views explaining a method forfabricating the non-volatile memory device according to the prior art.

FIG. 2F illustrates a plane view of a region where a drain contact isformed according to the prior art.

FIG. 3 illustrates a schematic diagram showing a layout of anon-volatile memory device in accordance with an embodiment of thepresent invention.

FIGS. 4A to 4C illustrate sectional views explaining a method forfabricating the non-volatile memory device in accordance with a firstembodiment of the present invention.

FIGS. 5A to 5G illustrate sectional views explaining a method forfabricating the non-volatile memory device in accordance with a secondembodiment of the present invention.

DESCRIPTION OF SPECIFIC EMBODIMENTS

Other objects and advantages of the present invention can be understoodby the following description, and become apparent with reference to theembodiments of the present invention.

Referring to the drawings, the illustrated thickness of layers andregions are exaggerated to facilitate explanation. When a first layer isreferred to as being “on” a second layer or “on” a substrate, it couldmean that the first layer is formed directly on the second layer or thesubstrate, or it could also mean that a third layer may exist betweenthe first layer and the substrate. Furthermore, the same or likereference numerals represent the same or like constituent elements,although they appear in different embodiments or drawings of the presentinvention.

FIG. 3 illustrates a layout of a non-volatile memory device inaccordance with an embodiment of the present invention.

Referring to FIG. 3, an active region A is defined by a device isolationlayer formed in a line type that is disposed in a field region F. On asubstrate, a bit line BL is disposed in a first direction A-A′ and aplurality of source selection lines SSL and a plurality of drainselection lines DSL are disposed in a second direction B-B′ intersectingwith the first direction A-A′. Furthermore, a plurality of word lines WLis disposed between the source selection lines SSL and the drainselection lines DSL.

Herein, the source selection lines SSL connect gate electrodes of sourceselection transistors and a common source line CSL is disposed in ajunction region between the source selection lines SSL. The drainselection lines DSL connect gate electrodes of the drain selectiontransistors and drain contact plugs DCT are disposed in a junctionregion between the drain selection lines DSL.

The source selection lines SSL or the drain selection lines DSL operateas typical transistors. A region where the source selection lines SSLand the drain selection lines DSL are disposed is referred to as aperipheral circuit region and a region where memory cells storing dataare disposed is referred to as a cell region.

FIGS. 4A to 4C illustrate sectional views explaining a method forfabricating the non-volatile memory device in accordance with a firstembodiment of the present invention and cross-sectional views takenalong the first direction A-A′ of FIG. 3.

Referring to FIG. 4A, a gate pattern including a tunnel insulation layer41, a floating gate electrode 42, a charge blocking layer 43 and acontrol gate electrode 44 is formed on a substrate 40. Herein, a processof forming the gate pattern may be performed using various methods suchas self-aligned shallow trench isolation (SA-STI), self-aligned floatinggate (SA-FG) and advanced self-aligned STI (ASA-STI), and thisembodiment of the present invention may be applied to various methodsfor forming the gate pattern. Since the methods for forming the gatepattern are apparent to those skilled in the art, the detailed processesof this embodiment are not described herein.

Then, a first spacer 45 is formed on a sidewall of the gate pattern.Herein, the first spacer 45 may be formed of oxide.

A second spacer 46 is formed on the whole surface of a resultantstructure including the first spacer 45. The second spacer 46 is for aself align contact (SAC) etching and may include a material whoseselectivity to the first spacer 45 is great. For instance, the secondspacer 46 may be formed of nitride.

After forming a first inter-layer insulation layer 47 on the wholesurface of a resultant structure including the second spacer 46, aplanarization process is performed on the first inter-layer insulationlayer 47 until a top surface of the second spacer 46 is exposed.

Referring to FIG. 4B, the first inter-layer insulation layer 47, thesecond spacer 46 and the first spacer 45 are etched back to a givendepth from a top surface of the gate pattern to expose a portion of thecontrol gate electrode 44.

Subsequently, after forming a mask pattern 48 exposing the peripheralcircuit region while covering the cell region on a resultant structureobtained by performing the etch-back process, a process of exposing atop surface of the floating gate electrode 42 is performed by etchingthe first inter-layer insulation layer 47, the control gate electrode 44and the charge blocking layer 43 using the mask pattern 48 as an etchbarrier.

As a result, a gate pattern including the tunnel insulation layer 41 andthe floating gate electrode 42 is formed in the peripheral circuitregion and a gate pattern including the tunnel insulation layer 41, thefloating gate electrode 42, the charge blocking layer 43 and the controlgate electrode 44 is formed in the cell region. Therefore, a separateprocess of forming a charge blocking layer contact hole is not required.

Furthermore, in the process of removing the control gate electrode 44and the charge blocking layer 43 in the peripheral circuit region, thefist spacer 45, the second spacer 46 and the first inter-layerinsulation layer 47 disposed in a gap region between gate patterns inthe peripheral circuit region are also removed. Accordingly, although avoid is generated in the process of filling the first inter-layerinsulation layer 47, the void is removed in this removing process. As aresult, it is possible to prevent a short type defective of a draincontact.

Then, although it is not shown, it is preferable to etch a part ofthickness of the floating gate electrode 42 that is exposed by removingthe control gate electrode 44 and the charge blocking layer 43. Throughthis, it is possible to further reduce the height of the gate pattern inthe peripheral circuit region and thus the generation of a void in asubsequent process of forming a second inter-layer insulation layer maybe prevented.

Referring to FIG. 4C, a metal silicidation process is performed on thefloating gate electrode 42 of the gate pattern formed in the peripheralcircuit region and the control gate electrode 44 of the gate patternformed in the cell region.

Therefore, a gate pattern including a metal silicide floating gateelectrode 42A is formed in the peripheral circuit region and a gatepattern including a metal silicide control gate electrode 44A is formedin the cell region. Like this, by directly siliciding the floating gateelectrode 42 of the gate pattern formed in the peripheral circuitregion, the performance of the memory device can be much improved.

Hereinafter, the metal silicidation process will be described in detail.First of all, a metal layer is formed on the whole surface of aresultant structure where the floating gate electrode 42 formed in theperipheral circuit region is exposed. The metal layer may be formed ofcobalt (Co) or nickel (Ni). Then, a heat treatment process is employedto accomplish the metal silicidation on the floating gate electrode 42formed in the peripheral circuit region and the control gate electrode44 formed in the cell region. The metal silicidation process isterminated by removing the metal layer that is not reacted in the heattreatment process.

Subsequently, after forming a second inter-layer insulation layer 49 onthe whole surface of a resultant structure obtained by performing themetal silicidation process, a third spacer 50 is formed on the wholesurface of the second inter-layer insulation layer 49. The third spacer50 is formed to protect the gate pattern and may be formed of nitride.

A third inter-layer insulation layer 51 is formed on the whole surfaceof a resultant structure including the third spacer 50.

A contact hole exposing a portion of the substrate 40 disposed betweenthe gate patterns formed in the peripheral circuit region is formed byselectively etching the third inter-layer insulation layer 51, the thirdspacer 50, the second inter-layer insulation layer 49, the firstinter-layer insulation layer 47, the second spacer 46 and the tunnelinsulation layer 41. A contact plug is formed by filling the contacthole with a conducting layer 52.

As described above, it is possible to fabricate the non-volatile memorydevice including the peripheral circuit region that has the gate patternincluding the tunnel insulation layer 41 and the metal silicide floatinggate electrode 42A formed on the substrate 40 and the cell region thathas the gate pattern including the tunnel insulation layer 41, thefloating gate electrode 42, the charge blocking layer 43 and the metalsilicide control gate electrode 44A.

By selectively removing the control gate electrode 44 and the chargeblocking layer 43 of the gate pattern formed in the peripheral circuitregion, the separate process of forming the charge blocking layercontact hole is not required. Therefore, it is possible to introduce amethod for fabricating a non-volatile memory device that is moreappropriate in improving a degree of integration of the memory device.

Moreover, by lowering the height of the gate pattern in the peripheralcircuit region, it is possible to prevent a void from being generated inthe process of forming the contact plug. Accordingly, it is alsopossible to avoid the short type defective that adjacent drains areconnected to each other by the void.

FIGS. 5A to 5G illustrate sectional views explaining a method forfabricating the non-volatile memory device in accordance with a secondembodiment of the present invention. FIGS. 5A to 5D illustratecross-sectional views taken along the second direction B-B′ of FIG. 3and FIGS. 5E to 5G illustrate cross-sectional views taken along thefirst direction A-A′ of FIG. 3.

In particular, the second embodiment of the present invention is toexplain a method for fabricating a non-volatile memory device accordingto the ASA-STI process. Thus, there is described a method foradditionally forming a second floating gate electrode formed as a linetype on a first floating gate electrode to connect first floating gateelectrodes formed as an island type. The explanation for other processesalready explained in the first embodiment is omitted herein.

Referring to FIG. 5A, a tunnel insulation layer 61, a first floatinggate electrode conducting layer 62 and a hard mask layer 63 are formedon a substrate 60. Herein, the tunnel insulation layer 61 may be formedof oxide; the first floating gate electrode conducting layer 62 may beformed of polysilicon; and the hard mask layer 63 may be formed ofnitride.

Then, after etching the hard mask layer 63 using an isolation (ISO)mask, the first floating gate electrode conducting layer 62 and thetunnel insulation layer 61 are sequentially etched using the etched hardmask layer as an etch barrier, and the substrate 60 is etched to a givendepth to form a device isolation trench. In this process of forming thedevice isolation trench, the first floating gate electrode conductinglayer 62 is patterned as a line type extending along the first directionA-A′.

A device isolation layer 64 is formed by filling the device isolationtrench with an insulation layer.

Referring to FIG. 5B, after adjusting an effective field oxide height(EFH) by etching a part of thickness of the device isolation layer 64, atop surface of the first floating gate electrode conducting layer 62 isexposed by removing the hard mask layer 63.

Subsequently, a second floating gate electrode conducting layer 65 isformed on a resultant structure where the top surface of the firstfloating gate electrode conducting layer 62 is exposed. Herein, thesecond floating gate electrode conducting layer 65 is employed toconnect first floating gate electrodes formed as the island type thatare to be formed by a subsequent gate patterning process. The secondfloating gate electrode conducting layer 65 may be formed of apolysilicon layer. Furthermore, the second floating gate electrodeconducting layer 65 may have a thickness of approximately 250 Å toapproximately 350 Å.

Referring to FIG. 5C, a mask pattern 66 is formed on a resultantstructure where the second floating gate electrode conducting layer 65is formed, wherein the mask pattern 66 exposes the cell region whilecovering the peripheral circuit region. Then, the floating gateelectrode conducting layer 65 formed in the cell region is removed usingthe mask pattern 66 as an etch barrier.

As a result, the second floating gate electrode conducting layer 65remains only in the peripheral circuit region and it is indicated by areference numeral 65A.

Referring to FIG. 5D, after forming a charge blocking layer 67 and acontrol gate electrode conducting layer 68 on a resultant structurewhere the second floating gate electrode conducting layer 65A is formed,a gate patterning process is performed thereon.

At this time, in the cell region, a gate pattern including the tunnelinsulation layer 61, a first floating gate, i.e., the first floatinggate electrode conducting layer 62, the charge blocking layer 67 and acontrol gate electrode, i.e., the control gate electrode conductinglayer 68, is formed by etching the control gate electrode conductinglayer 68, the charge blocking layer 67 and the first floating gateelectrode conducting layer 62.

Furthermore, in the peripheral circuit region, a gate pattern includingthe tunnel insulation layer 61, the first floating gate 62, the secondfloating gate electrode 65A, the charge blocking layer 67 and thecontrol gate electrode 68 is formed by etching the control gateelectrode conducting layer 68, the charge blocking layer 67, the secondfloating gate electrode conducting layer 65A and the first floating gateelectrode conducting layer 62.

Herein, in the etching process of forming the gate pattern, the firstfloating gate electrode conducting layer 62 formed as the line type ispatterned to the island type. Namely, first floating gate electrodes 62of a plurality of transistors formed in the peripheral circuit regionare formed as the island type so that they are separated from eachother, and they are arranged in the first and second directions to havea certain distance there between.

Moreover, in the etching process of forming the gate pattern, the secondfloating gate electrode conducting layer 65A covering the peripheralcircuit region is patterned to be formed as the line type. That is, thesecond floating gate electrode conducting layer 65A is patterned to aplurality of lines extending parallel to the second direction B-B′.

Therefore, the second floating gate 65A connects the first floating gateelectrodes 62 formed as the island type which is formed under the secondfloating gate 65A. That is, a plurality of first floating gateelectrodes 62 arranged in the second direction B-B′ is connected to eachother by the second floating gate electrode 65A formed as the line typeand extending along the second direction B-B′.

Referring to FIG. 5E, after forming a first spacer 69 on a sidewall ofthe gate pattern, a second spacer 70 is formed on the whole surface of aresultant structure including the first spacer 69.

Then, after forming a first inter-layer insulation layer 71 on the wholesurface of a resultant structure including the second spacer 70, aplanarization process is performed until a top surface of the secondspacer 70 is exposed.

Referring to FIG. 5F, the first inter-layer insulation layer 71, thesecond spacer 70 and the first spacer 69 are etched back to a givendepth from a top surface of the gate pattern to expose a portion of thecontrol gate electrode 68.

Subsequently, after forming a mask pattern 72 exposing the peripheralcircuit region while covering the cell region on a resultant structureobtained by performing the etch-back process, the first inter-layerinsulation layer 71, the control gate electrode 68 and the chargeblocking layer 67 are etched using the mask pattern 72 as an etchbarrier to thereby expose a top surface of the second floating gateelectrode 65A.

Accordingly, the gate pattern including the tunnel insulation layer 61,the first floating gate electrode 62 and the second floating gateelectrode 65A is formed in the peripheral circuit region, and the gatepattern including the tunnel insulation layer 61, the first floatinggate electrode 62, the charge blocking layer 67 and the control gateelectrode 68 is formed in the cell region.

Referring to FIG. 5G, the metal silicidation process is performed on thefloating gate electrodes 65A and 62 of the gate pattern formed in theperipheral circuit region and the control gate electrode 68 of the gatepattern formed in the cell region. In accordance with anotherembodiment, in the peripheral circuit region, the silicidation processmay be performed on only the second floating gate electrode 65A. Adegree of the metal silicidation may be determined by considering theperformance of the memory device.

As a result, a gate pattern including metal silicide floating gateelectrodes 65B and 62A is formed in the peripheral circuit region and agate pattern including a metal silicide control gate electrode 68A isformed in the cell region.

After that, a second inter-layer insulation layer 73 is formed on thewhole surface of a resultant structure, where the metal silicidationprocess is performed, and a third spacer 74 is then formed on the wholesurface of the second inter-layer insulation layer 73. Herein, thesecond spacer 74 may be formed of nitride.

Subsequently, a third inter-layer insulation layer 75 is formed on thewhole surface of a resultant structure including the third spacer 74.

Then, a contact hole is formed by selectively etching the thirdinter-layer insulation layer 75, the third spacer 74, the secondinter-layer insulation layer 73, the first inter-layer insulation layer71, the second spacer 70 and the tunnel insulation layer 61, wherein thecontact hole is formed to expose a portion of the substrate 60 disposedbetween gate patterns formed in the peripheral circuit region.Subsequently, a contact plug is formed by filling the contact hole witha conducting layer 76.

As described above, in accordance with the present invention, it ispossible to fabricate the non-volatile memory device including theperipheral circuit region that has the gate pattern including the tunnelinsulation layer 61, the first floating gate electrode 62 and the secondfloating gate electrode 65 formed on the substrate 60, and the cellregion that has the gate pattern including the tunnel insulation layer61, the first floating gate electrode 62, the charge blocking layer 67and the control gate electrode 68 formed on the substrate 60.

Like this, by additionally forming the second floating gate electrode65A on the first floating gate electrode 62, although the first floatinggate electrode 62 is formed as the island type through the ASA-STIprocess, the first floating gate electrodes 62 formed as the island typemay be connected to each other by the second floating gate electrode65A.

In accordance with the embodiments of the present invention, since thecontrol gate electrode and the charge blocking layer of the gate patternformed in the peripheral circuit region are removed, it is not requiredto perform the separate process of forming the charge blocking layercontact hole.

Therefore, it is possible to simplify the process of fabricating thememory device and introduce the process that is more appropriate inimproving the degree of integration of the memory device. In particular,it is possible to improve the performance of the memory device bydirectly metal-siliciding the floating gate electrode that is exposed byremoving the control gate electrode and the charge blocking layer, andthe signal delay due to the distance from the contact is not causedsince the gate pattern including the tunnel insulation layer and thefloating gate electrode is formed in the peripheral circuit region.Furthermore, since it is not required to form a protection layer forpreventing the charge blocking layer from being damaged when forming thecharge blocking layer contact hole, it is possible to prevent theperformance deterioration of the memory device due to the unstableinterface between the protection layer and the control gate electrode.

In accordance with the embodiments of the present invention, although avoid is generated in the process of filling a gap region between gatepatterns with the inter-layer insulation layer, the void is also removedwhen the control gate electrode and the charge blocking layer areremoved. Moreover, since the height of the gate pattern can be loweredwhen removing the control gate electrode and the charge blocking layer,the generation of a void when forming a subsequent inter-layerinsulation layer can be prevented. Therefore, when forming a subsequentdrain contact, it is possible to prevent the occurrence of a contactfailure due to the connection between adjacent drain contacts that iscaused by the void.

While the present invention has been described with respect to thespecific embodiments, it will be apparent to those skilled in the artthat various changes and modifications may be made without departingfrom the spirit and scope of the invention as defined in the followingclaims.

1. A method for fabricating a non-volatile memory device including aperipheral circuit region and a cell region, the method comprising:forming gate patterns over a substrate, the gate pattern including atunnel insulation layer, a floating gate electrode, a charge blockinglayer and a control gate electrode; and removing the control gateelectrode and the charge blocking layer of the gate pattern formed inthe peripheral circuit region to expose an entire upper surface of thefloating gate electrode of the gate pattern formed in the peripheralcircuit region.
 2. The method of claim 1, wherein the removing of thecontrol gate electrode and the charge blocking layer of the gate patternformed in the peripheral circuit region comprises: forming a firstinsulation layer over the whole surface of a resultant structureincluding the gate patterns formed over the substrate; forming a maskpattern over the first insulation layer to expose the peripheral circuitregion; and exposing a top surface of the floating gate electrode byetching the first insulation layer, the control gate electrode and thecharge blocking layer using the mask pattern as an etch barrier.
 3. Themethod of claim 2, after the forming of the first insulation layer,further comprising: etching-back the first insulation layer to a givendepth from a top surface of the control gate electrode.
 4. The method ofclaim 1, after the forming of the gate patterns, further comprising:forming a first spacer on a sidewall of a floating gate electrode, acharge blocking layer and a control gate electrode; and forming a secondspacer over the whole surface of a resultant structure including thefirst spacer.
 5. The method of claim 4, wherein the first spacerincludes oxide and the second spacer includes nitride.
 6. The method ofclaim 1, further comprising performing a metal silicidation process onthe floating gate electrode of the gate pattern formed in the peripheralcircuit region and the control gate electrode of the gate pattern formedin the cell region.
 7. The method of claim 6, wherein the performing ofthe metal silicidation process comprises: forming a metal layer over thewhole surface of a resultant structure where the control gate electrodeand the charge blocking layer of the gate pattern formed in theperipheral circuit region are removed; performing the metal silicidationprocess on the floating gate electrode formed in the peripheral circuitregion and the control gate electrode formed in the cell region througha heat treatment process; and removing the metal layer that is notreacted in the heat treatment process.
 8. The method of claim 7, whereinthe metal layer includes cobalt (Co) or nickel (Ni).
 9. The method ofclaim 6, after the performing of the metal silicidation process, furthercomprising: forming a second insulation layer over the whole surface ofa resultant structure where the metal silicidation process is performed;forming a third spacer over a resultant structure where the secondinsulation layer is formed; and forming a third insulation layer overthe whole surface of a resultant structure where the third spacer isformed.
 10. The method of claim 9, wherein the third spacer includesnitride.
 11. The method of claim 1, further comprising etching a part ofthickness of the floating gate electrode that is exposed by removing thecontrol gate electrode and the charge blocking layer. 12-27. (canceled)